Excitonic effects on the silicon plasmon resonance
Title | Excitonic effects on the silicon plasmon resonance |
Publication Type | Palaiseau Article |
Acknowledgements | None |
Author Address | Olevano, V (Reprint Author), Ecole Polytech, CEA, CNRS, Solides Irradies Lab, F-91128 Palaiseau, France. Ecole Polytech, CEA, CNRS, Solides Irradies Lab, F-91128 Palaiseau, France. Univ Roma Tor Vergata, Dipartimento Fis, INFM, I-00133 Rome, Italy. |
Olevano, V, Reining, L | |
Publisher | AMERICAN PHYSICAL SOC |
Year of Publication | 2001 |
Journal | Phys. Rev. Lett. |
Volume | 86 |
Type of Work | Article |
Keywords | paper |
Pagination | 5962-5965 |
Abstract | We present an ab initio calculation of the electron energy loss spectrum of silicon including local-field, self-energy, and excitonic effects. When self-energy corrections are added to the standard random phase approximation (RPA) the line shape of the plasmon resonance worsens. The electron-hole interaction cancels this correction and improves the result both compared to the RPA and to the self-energy one, yielding very good agreement between theory and experiment provided that the mixing of interband transitions of both positive and negative frequencies is included. |
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