Excitonic effects on the silicon plasmon resonance

TitleExcitonic effects on the silicon plasmon resonance
Publication TypePalaiseau Article
Acknowledgements

None

Author Address

Olevano, V (Reprint Author), Ecole Polytech, CEA, CNRS, Solides Irradies Lab, F-91128 Palaiseau, France. Ecole Polytech, CEA, CNRS, Solides Irradies Lab, F-91128 Palaiseau, France. Univ Roma Tor Vergata, Dipartimento Fis, INFM, I-00133 Rome, Italy.

Olevano, V, Reining, L
Year of Publication2001
JournalPhys. Rev. Lett.
Volume86
Keywordspaper
Abstract

We present an ab initio calculation of the electron energy loss spectrum of silicon including local-field, self-energy, and excitonic effects. When self-energy corrections are added to the standard random phase approximation (RPA) the line shape of the plasmon resonance worsens. The electron-hole interaction cancels this correction and improves the result both compared to the RPA and to the self-energy one, yielding very good agreement between theory and experiment provided that the mixing of interband transitions of both positive and negative frequencies is included.

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