Ab initio calculation of excitonic effects in the optical spectra of semiconductors

TitleAb initio calculation of excitonic effects in the optical spectra of semiconductors
Publication TypePalaiseau Article
Acknowledgements

None

Author Address

Albrecht, S (Reprint Author), Ecole Polytech, CNRS, CEREM, CEA,URA 1380,Lab Solides Irradies, F-91128 Palaiseau, France. Ecole Polytech, CNRS, CEREM, CEA,URA 1380,Lab Solides Irradies, F-91128 Palaiseau, France. Univ Roma Tor Vergata, Dipartimento Fis, Ist Nazl Fis Mat, I-00133 Rome, Italy.

Albrecht, S, Reining, L, Del Sole, R, Onida, G
PublisherAMERICAN PHYSICAL SOC
Year of Publication1998
JournalPhys. Rev. Lett.
Volume80
Type of WorkArticle
Keywordspaper
Pagination4510-4513
Abstract

An ab initio approach to the calculation of excitonic effects in the optical absorption spectra of semiconductors and insulators is formulated. It starts from a quasiparticle band structure calculation and is based on the relevant Bethe-Salpeter equation. An application to bulk silicon shows a substantial improvement with respect to previous calculations in the description of the experimental spectrum, for both peak positions and line shape.

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