Ab initio calculation of excitonic effects in the optical spectra of semiconductors
Title | Ab initio calculation of excitonic effects in the optical spectra of semiconductors |
Publication Type | Palaiseau Article |
Acknowledgements | None |
Author Address | Albrecht, S (Reprint Author), Ecole Polytech, CNRS, CEREM, CEA,URA 1380,Lab Solides Irradies, F-91128 Palaiseau, France. Ecole Polytech, CNRS, CEREM, CEA,URA 1380,Lab Solides Irradies, F-91128 Palaiseau, France. Univ Roma Tor Vergata, Dipartimento Fis, Ist Nazl Fis Mat, I-00133 Rome, Italy. |
Albrecht, S, Reining, L, Del Sole, R, Onida, G | |
Publisher | AMERICAN PHYSICAL SOC |
Year of Publication | 1998 |
Journal | Phys. Rev. Lett. |
Volume | 80 |
Type of Work | Article |
Keywords | paper |
Pagination | 4510-4513 |
Abstract | An ab initio approach to the calculation of excitonic effects in the optical absorption spectra of semiconductors and insulators is formulated. It starts from a quasiparticle band structure calculation and is based on the relevant Bethe-Salpeter equation. An application to bulk silicon shows a substantial improvement with respect to previous calculations in the description of the experimental spectrum, for both peak positions and line shape. |
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