TY - JOUR
KW - paper
AU - Conor Hogan
AU - D Paget
AU - OE Tereshchenko
AU - Lucia Reining
AU - G Onida
AB - Upon adsorption of Cs, the As-rich c(2 X 8)/(2 X 4) reconstruction of GaAs(001) is found to exhibit an intense negative signal between 3 eV and 5 eV in the reflectance anisotropy spectrum. This signal has a universal character in that similar features also appear on the Ga-rich surface. The mechanism of this signal is interpreted using ab initio calculations of Cs adsorption at As and Ga sites of the As-rich surface. The calculations succeed in explaining the universality of the signal. In the vicinity of the E-0\textquoteright bulk critical point at 4.5 eV, the signal arises from perturbation of bulk states terminating at the surface. At lower energies, the signal arises from the creation of new surface resonances induced by the Cs adatom.
BT - Phys. Rev. B
CY - ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
DA - MAR
DO - 10.1103/PhysRevB.69.125332
M1 - 12
N2 - Upon adsorption of Cs, the As-rich c(2 X 8)/(2 X 4) reconstruction of GaAs(001) is found to exhibit an intense negative signal between 3 eV and 5 eV in the reflectance anisotropy spectrum. This signal has a universal character in that similar features also appear on the Ga-rich surface. The mechanism of this signal is interpreted using ab initio calculations of Cs adsorption at As and Ga sites of the As-rich surface. The calculations succeed in explaining the universality of the signal. In the vicinity of the E-0\textquoteright bulk critical point at 4.5 eV, the signal arises from perturbation of bulk states terminating at the surface. At lower energies, the signal arises from the creation of new surface resonances induced by the Cs adatom.
PB - AMERICAN PHYSICAL SOC
PP - ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA
PY - 2004
EP - 125332
T2 - Phys. Rev. B
TI - Optical anisotropy induced by cesium adsorption on the As-rich c(2X8) reconstruction of GaAs(001)
UR - http://dx.doi.org/10.1103/PhysRevB.69.125332
VL - 69
ER -