TY - JOUR
AU - Meryem Bouaziz
AU - Leonard Schue
AU - Noeliarinala Andriambelaza
AU - Natalia Alyabyeva
AU - Jean-Christophe Girard
AU - Pavel Dudin
AU - Fabian Cadiz
AU - José Avila
AU - Yannick Dappe
AU - Cesar Gonzalez
AU - Julien Chaste
AU - Fabrice Oehler
AU - Christine Giorgetti
AU - Fausto Sirotti
AU - Abdelkarim Ouerghi
AB - The electronic structure of semiconducting 2D materials such as transition metal dichalcogenides (TMDs) is known to be tunable by its environment, from simple external fields applied with electrical contacts up to complex van der Waals heterostructure assemblies. However, conventional alloying from reference binary TMD compounds to composition-controlled ternary alloys also offers unexplored opportunities. In this work, we use nano-angle resolved photoemission spectroscopy (nano-ARPES) and density functional theory (DFT) calculations to study the structural and electronic properties of different alloy compositions of bulk W⁢S2⁢(1−𝑥)⁢S⁢e2⁢𝑥
. Our results demonstrate the continuous variation of the band structure and the progressive evolution of the valence band splitting at the K points from 420 to 520 meV in bulk W⁢S2⁢(1−𝑥)⁢S⁢e2⁢𝑥
. We also carried out scanning tunneling microscopy (STM) measurements and DFT to understand the possible S or Se substitutions variants in W⁢S2⁢(1−𝑥)⁢S⁢e2⁢𝑥
alloys, with different local atomic configurations. Our work opens up perspectives for the fine control of the band dispersion in van der Waals materials and demonstrates how the band structure can be tuned in bulk TMDs. The collected information can serve as a reference for future applications.
BT - Phys. Rev. B
DA - 12/2025
DO - 10.1103/z9l2-3qw8
N2 - The electronic structure of semiconducting 2D materials such as transition metal dichalcogenides (TMDs) is known to be tunable by its environment, from simple external fields applied with electrical contacts up to complex van der Waals heterostructure assemblies. However, conventional alloying from reference binary TMD compounds to composition-controlled ternary alloys also offers unexplored opportunities. In this work, we use nano-angle resolved photoemission spectroscopy (nano-ARPES) and density functional theory (DFT) calculations to study the structural and electronic properties of different alloy compositions of bulk W⁢S2⁢(1−𝑥)⁢S⁢e2⁢𝑥
. Our results demonstrate the continuous variation of the band structure and the progressive evolution of the valence band splitting at the K points from 420 to 520 meV in bulk W⁢S2⁢(1−𝑥)⁢S⁢e2⁢𝑥
. We also carried out scanning tunneling microscopy (STM) measurements and DFT to understand the possible S or Se substitutions variants in W⁢S2⁢(1−𝑥)⁢S⁢e2⁢𝑥
alloys, with different local atomic configurations. Our work opens up perspectives for the fine control of the band dispersion in van der Waals materials and demonstrates how the band structure can be tuned in bulk TMDs. The collected information can serve as a reference for future applications.
PB - American Physical Society
PY - 2025
EP - 245423
T2 - Phys. Rev. B
TI - Tunable electronic band structure in WS2(1-x)S2x van der Waals alloys
UR - https://link.aps.org/doi/10.1103/z9l2-3qw8
VL - 112
ER -