Found 9 results
Filters: Author is Iori, Federico  [Clear All Filters]
2012
F. Iori, Rodolakis, F., Gatti, M., Reining, L., Upton, M., Shvyd'ko, Y., Rueff, J. - P., and Marsi, M., “Low-energy excitations in strongly correlated materials: A theoretical and experimental study of the dynamic structure factor in V2O3”, Phys. Rev. B, vol. 86. American Physical Society, p. 205132, 2012.
F. Iori, Gatti, M., and Rubio, A., “Role of nonlocal exchange in the electronic structure of correlated oxides”, PHYSICAL REVIEW B, vol. 85, 2012.
2010
O. Pulci, Degoli, E., Iori, F., Marsili, M., Palummo, M., Del Sole, R., and Ossicini, S., “Electronic and optical properties of Si and Ge nanocrystals: An ab initio study”, Superlattices and Microstructures, vol. 47. pp. 178 - 181, 2010.
M. Palummo, Iori, F., Del Sole, R., and Ossicini, S., “Giant excitonic exchange splitting in Si nanowires: First-principles calculations”, Phys. Rev. B, vol. 81. American Physical Society, p. 121303, 2010.
2009
M. Palummo, Iori, F., Del Sole, R., and Ossicini, S., “Electronic properties and dielectric response of surfaces and nanowires of silicon from ab-initio approaches”, Superlattices and Microstructures, vol. 46. pp. 234 - 239, 2009.
E. Papalazarou, Gatti, M., Marsi, M., Brouet, V., Iori, F., Reining, L., Annese, E., Vobornik, I., Offi, F., Fondacaro, A., Huotari, S., Lacovig, P., Tjernberg, O., Brookes, N. B., Sacchi, M., Metcalf, P., and Panaccione, G., “Valence-band electronic structure of V[sub 2]O[sub 3]: Identification of V and O bands”, Physical Review B (Condensed Matter and Materials Physics), vol. 80. APS, p. 155115, 2009.
2008
S. Ossicini, Bisi, O., Degoli, E., Marri, I., Iori, F., Luppi, E., Magri, R., Poli, R., Cantele, G., Ninno, D., Trani, F., Marsili, M., Pulci, O., Olevano, V., Gatti, M., Gaal-Nagy, K., Incze, A., and Onida, G., “First-principles study of silicon nanocrystals: Structural and electronic properties, absorption, emission, and doping”, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY, vol. 8. pp. 479-492, 2008.
2007
F. Iori, Degoli, E., Magri, R., Marri, I., Cantele, G., Ninno, D., Trani, F., Pulci, O., and Ossicini, S., “Engineering silicon nanocrystals: Theoretical study of the effect of codoping with boron and phosphorus”, PHYSICAL REVIEW B, vol. 76. AMER PHYSICAL SOC, ONE PHYSICS ELLIPSE, COLLEGE PK, MD 20740-3844 USA, 2007.
F. Iori, “Engineering Silicon Nanostructures: theoretical study of the effects of doping with Boron and Phosphorus”, UNIVERSITA DEGLI STUDI DI MODENA E REGGIO EMILIA, Modena, 2007.