Signatures of short-range many-body effects in the dielectric function of silicon for finite momentum transfer
Title | Signatures of short-range many-body effects in the dielectric function of silicon for finite momentum transfer |
Publication Type | Palaiseau Article |
Acknowledgements | None |
Author Address | Weissker, HC (Reprint Author), Ecole Polytech, CNRS, UMR 7642, CEA,DSM,Lab Solides Irradies, F-91128 Palaiseau, France. Ecole Polytech, CNRS, UMR 7642, CEA,DSM,Lab Solides Irradies, F-91128 Palaiseau, France. European Synchrotron Radiat Facil, F-38043 Grenoble, France. CNRS, LEPES, UPR 11, F-38042 Grenoble, France. ETSF, Palaiseau, France. |
DOI | 10.1103/PhysRevLett.97.237602 |
Weissker, H-C, Serrano, J, Huotari, S, Bruneval, F, Sottile, F, Monaco, G, Krisch, M, Olevano, V, Reining, L | |
Publisher | AMERICAN PHYSICAL SOC |
Year of Publication | 2006 |
Journal | Phys. Rev. Lett. |
Volume | 97 |
Type of Work | Article |
URL | http://dx.doi.org/10.1103/PhysRevLett.97.237602 |
Keywords | paper |
Pagination | 237602 |
Abstract | We present an investigation of the dynamic structure factor and of the dielectric function epsilon(M)(Q,omega) of the prototypical semiconductor silicon for finite momentum transfer, combining inelastic x-ray scattering experiments and ab initio calculations. In contrast with optical spectra, for finite momentum transfer time-dependent density-functional theory in the adiabatic local-density approximation together with lifetime broadening describes the physics of valence excitations correctly. Major structures in the spectra, governed by short-range crystal and exchange-correlation local-field effects, are strongly influenced by a mixing of transitions of positive and negative energies, in striking difference to spectra for vanishing momentum transfer. This mixing gives rise to a pronounced Fano asymmetry. |
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