Excitonic effects on the silicon plasmon resonance
|Title||Excitonic effects on the silicon plasmon resonance|
|Publication Type||Palaiseau Article|
|Author Address|| |
Olevano, V (Reprint Author), Ecole Polytech, CEA, CNRS, Solides Irradies Lab, F-91128 Palaiseau, France. Ecole Polytech, CEA, CNRS, Solides Irradies Lab, F-91128 Palaiseau, France. Univ Roma Tor Vergata, Dipartimento Fis, INFM, I-00133 Rome, Italy.
|Olevano, V, Reining, L|
|Publisher||AMERICAN PHYSICAL SOC|
|Year of Publication||2001|
|Journal||Phys. Rev. Lett.|
|Type of Work||Article|
We present an ab initio calculation of the electron energy loss spectrum of silicon including local-field, self-energy, and excitonic effects. When self-energy corrections are added to the standard random phase approximation (RPA) the line shape of the plasmon resonance worsens. The electron-hole interaction cancels this correction and improves the result both compared to the RPA and to the self-energy one, yielding very good agreement between theory and experiment provided that the mixing of interband transitions of both positive and negative frequencies is included.