Screening models and simplified GW approaches - Si and GAN as test cases
| Title | Screening models and simplified GW approaches - Si and GAN as test cases |
| Publication Type | Palaiseau Article |
| Acknowledgements | None |
| Author Address | PALUMMO, M (Reprint Author), UNIV ROMA TOR VERGATA,DIPARTIMENTO FIS,VIA RIC SCI 1,I-00133 ROME,ITALY. ECOLE POLYTECH,CEA,DTA DECM,SOLIDES IRRADIES LAB,CNRS,URA 1380,F-91128 PALAISEAU,FRANCE. UNIV JENA,FAK PHYS ASTRON,D-07743 JENA,GERMANY. UNIV CAGLIARI,FAC MED & CHIRURG,IST FIS,I-09125 CAGLIARI,ITALY. |
| Palummo, M, Del Sole, R, Reining, L, Bechstedt, F, Cappellini, G | |
| Publisher | PERGAMON-ELSEVIER SCIENCE LTD |
| Year of Publication | 1995 |
| Journal | Solid State Communications |
| Volume | 95 |
| Type of Work | Article |
| Keywords | paper |
| Pagination | 393-398 |
| Abstract | We compare models of diagonal and off-diagonal screening with LDA-RPA full calculations in Si and cubic GaN. Simplified GW calculations relying on these models are also compared with full GW calculations for the same materials. A recipe for simplified GW calculations is obtained which works well for small, moderate and wide gap semiconductors. |
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