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Keywords | |
Abstract |
We compare models of diagonal and off-diagonal screening with LDA-RPA full calculations in Si and cubic GaN. Simplified GW calculations relying on these models are also compared with full GW calculations for the same materials. A recipe for simplified GW calculations is obtained which works well for small, moderate and wide gap semiconductors. |
Year of Publication |
1995
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Journal |
Solid State Communications
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Volume |
95
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Number of Pages |
393-398
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Date Published |
AUG
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