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Ultrafast electron dynamics reveal the high potential of InSe for hot-carrier optoelectronics
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Ultrafast electron dynamics reveal the high potential of InSe for hot-carrier optoelectronics
Author
Zhesheng Chen
Christine Giorgetti
Jelena Sjakste
Raphael Cabouat
Valérie Véniard
Zailan Zhang
Amina Taleb-Ibrahimi
Evangelos Papalazarou
Marino Marsi
Abhay Shukla
Jacques Peretti
Luca Perfetti
Keywords
paper
Year of Publication
2018
Journal
Phys. rev. B
Volume
97
URL
https://journals.aps.org/prb/pdf/10.1103/PhysRevB.97.241201
DOI
10.1103/PhysRevB.97.241201
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