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Valence-band electronic structure of V[sub 2]O[sub 3]: Identification of V and O bands

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  • Valence-band electronic structure of V[sub 2]O[sub 3]: Identification of V and O bands
Author
E. Papalazarou
Matteo Gatti
Marino Marsi
V. Brouet
Federico Iori
Lucia Reining
E. Annese
I. Vobornik
F. Offi
A. Fondacaro
Simo Huotari
P. Lacovig
O. Tjernberg
N. Brookes
M. Sacchi
P. Metcalf
Giancarlo Panaccione
Keywords
binding energy
Fermi level
paper
paramagnetic materials
photoelectron spectra
valence bands
vanadium compounds
Abstract

We present a comprehensive study of the photon energy dependence of the valence band photoemission yield in the prototype Mott-Hubbard oxide V2O3. The analysis of our experimental results, covering an extended photon energy range (20?6000 eV) and combined with GW calculations, allows us to identify the nature of the orbitals contributing to the total spectral weight at different binding energies, and in particular to locate the V 4s states at about 8 eV binding energy. From this comparative analysis, we conclude that the intensity of the quasiparticle photoemission peak, observed close to the Fermi level in the paramagnetic metallic phase upon increasing photon energy, does not have a significant correlation with the intensity variation in the O 2p and V 3d yield, thus, confirming that bulk sensitivity is an essential requirement for the detection of this coherent low-energy excitation.

Year of Publication
2009
Journal
Physical Review B (Condensed Matter and Materials Physics)
Volume
80
Number of Pages
155115
URL
http://link.aps.org/abstract/PRB/v80/e155115
DOI
10.1103/PhysRevB.80.155115
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